JPS6345367A - 輸送型スパツタリング成膜法 - Google Patents
輸送型スパツタリング成膜法Info
- Publication number
- JPS6345367A JPS6345367A JP18822286A JP18822286A JPS6345367A JP S6345367 A JPS6345367 A JP S6345367A JP 18822286 A JP18822286 A JP 18822286A JP 18822286 A JP18822286 A JP 18822286A JP S6345367 A JPS6345367 A JP S6345367A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- film
- anode
- sputtered
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 25
- 230000015572 biosynthetic process Effects 0.000 title description 4
- 239000002245 particle Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 13
- 230000007246 mechanism Effects 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 9
- 238000009792 diffusion process Methods 0.000 abstract description 5
- 239000012535 impurity Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 36
- 230000008021 deposition Effects 0.000 description 8
- 239000011882 ultra-fine particle Substances 0.000 description 6
- 230000032258 transport Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- -1 full bending Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241001024304 Mino Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18822286A JPS6345367A (ja) | 1986-08-11 | 1986-08-11 | 輸送型スパツタリング成膜法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18822286A JPS6345367A (ja) | 1986-08-11 | 1986-08-11 | 輸送型スパツタリング成膜法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6345367A true JPS6345367A (ja) | 1988-02-26 |
| JPH0214427B2 JPH0214427B2 (en]) | 1990-04-09 |
Family
ID=16219908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18822286A Granted JPS6345367A (ja) | 1986-08-11 | 1986-08-11 | 輸送型スパツタリング成膜法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6345367A (en]) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2287884A2 (de) | 2009-08-18 | 2011-02-23 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Gasflusssputterquelle |
| JP2013520573A (ja) * | 2010-02-24 | 2013-06-06 | ティア・エービー | 粒子を製造するためのプラズマ・スパッタリング・プロセス |
| CN103751305A (zh) * | 2013-12-11 | 2014-04-30 | 内蒙古元和药业股份有限公司 | 一种治疗类风湿关节炎的药物及其制备方法 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0399833U (en]) * | 1990-01-31 | 1991-10-18 | ||
| CA2564539C (en) | 2005-11-14 | 2014-05-06 | Sulzer Metco Coatings B.V. | A method for coating of a base body with a platinum modified aluminide ptmal by means of a physical deposition out of the gas phase |
| WO2022009536A1 (ja) * | 2020-07-07 | 2022-01-13 | ソニーグループ株式会社 | スパッタリング装置およびスパッタリング成膜方法 |
-
1986
- 1986-08-11 JP JP18822286A patent/JPS6345367A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2287884A2 (de) | 2009-08-18 | 2011-02-23 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Gasflusssputterquelle |
| DE102009037853B3 (de) * | 2009-08-18 | 2011-03-31 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Gasflusssputterquelle |
| JP2013520573A (ja) * | 2010-02-24 | 2013-06-06 | ティア・エービー | 粒子を製造するためのプラズマ・スパッタリング・プロセス |
| CN103751305A (zh) * | 2013-12-11 | 2014-04-30 | 内蒙古元和药业股份有限公司 | 一种治疗类风湿关节炎的药物及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0214427B2 (en]) | 1990-04-09 |
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